Single FETs, MOSFETs

Results: 3
Manufacturer
EPCInfineon TechnologiesTexas Instruments
Series
eGaN®NexFET™OptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V100 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 100A (Tc)20A (Ta)101A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V5V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 50A, 5V3.4mOhm @ 50A, 10V23.9mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA2.3V @ 115µA2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs
4.7 nC @ 4.5 V23 nC @ 5 V46 nC @ 4.5 V
Vgs (Max)
+6V, -4V±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
655 pF @ 10 V3200 pF @ 50 V6500 pF @ 50 V
Power Dissipation (Max)
2.5W (Ta), 156W (Tc)2.9W (Ta)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
6-WSON (2x2)7-QFN (3x5)PG-TDSON-8-7
Package / Case
6-WDFN Exposed Pad7-PowerWQFN8-PowerTDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC034N10LS5ATMA1
MOSFET N-CH 100V 19A/100A TDSON
Infineon Technologies
26,247
In Stock
1 : ¥24.14000
Cut Tape (CT)
5,000 : ¥10.97498
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
19A (Ta), 100A (Tc)
4.5V, 10V
3.4mOhm @ 50A, 10V
2.3V @ 115µA
46 nC @ 4.5 V
±20V
6500 pF @ 50 V
-
2.5W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
EPC2302
EPC2302
TRANS GAN 100V DIE .0018OHM
EPC
65,502
In Stock
1 : ¥54.27000
Cut Tape (CT)
3,000 : ¥30.13009
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
101A (Ta)
5V
1.8mOhm @ 50A, 5V
2.5V @ 14mA
23 nC @ 5 V
+6V, -4V
3200 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
7-QFN (3x5)
7-PowerWQFN
6-WSON
CSD25310Q2T
MOSFET P-CH 20V 20A 6WSON
Texas Instruments
18,935
In Stock
1 : ¥6.49000
Cut Tape (CT)
250 : ¥4.07372
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
20A (Ta)
1.8V, 4.5V
23.9mOhm @ 5A, 4.5V
1.1V @ 250µA
4.7 nC @ 4.5 V
±8V
655 pF @ 10 V
-
2.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-WSON (2x2)
6-WDFN Exposed Pad
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.