Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesRohm Semiconductor
Series
-CoolSiC™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
60 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)20A (Tc)35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V15V18V
Rds On (Max) @ Id, Vgs
74mOhm @ 16.7A, 18V234mOhm @ 10A, 15V2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 1mA5.7V @ 5mA7V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V45 nC @ 15 V
Vgs (Max)
+20V, -2V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
15 pF @ 25 V930 pF @ 400 V1500 pF @ 100 V
Power Dissipation (Max)
200mW (Ta)133W (Tc)252W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
LPTSPG-TO247-3-41SST3
Package / Case
TO-236-3, SC-59, SOT-23-3TO-247-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SST3
RK7002BMT116
MOSFET N-CH 60V 250MA SST3
Rohm Semiconductor
274,552
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.27486
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
250mA (Ta)
2.5V, 10V
2.4Ohm @ 250mA, 10V
2.3V @ 1mA
-
±20V
15 pF @ 25 V
-
200mW (Ta)
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
LPTS
R6020JNJGTL
MOSFET N-CH 600V 20A LPTS
Rohm Semiconductor
1,787
In Stock
1 : ¥38.67000
Cut Tape (CT)
1,000 : ¥19.98209
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
20A (Tc)
15V
234mOhm @ 10A, 15V
7V @ 3.5mA
45 nC @ 15 V
±30V
1500 pF @ 100 V
-
252W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IMW65R039M1HXKSA1
IMW65R057M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
88
In Stock
1 : ¥76.35000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
35A (Tc)
18V
74mOhm @ 16.7A, 18V
5.7V @ 5mA
28 nC @ 18 V
+20V, -2V
930 pF @ 400 V
-
133W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
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of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.