Single FETs, MOSFETs

Results: 2
Manufacturer
Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET®U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
1.6A (Tc)8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
104mOhm @ 4A, 10V345mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.1 nC @ 4.5 V19 nC @ 10 V
Vgs (Max)
+10V, -20V±20V
Input Capacitance (Ciss) (Max) @ Vds
210 pF @ 30 V890 pF @ 10 V
Power Dissipation (Max)
1W (Ta), 1.7W (Tc)27W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)175°C
Supplier Device Package
DPAK+SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2309CDS-T1-GE3
MOSFET P-CH 60V 1.6A SOT23-3
Vishay Siliconix
25,348
In Stock
1 : ¥4.35000
Cut Tape (CT)
3,000 : ¥1.46767
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.6A (Tc)
4.5V, 10V
345mOhm @ 1.25A, 10V
3V @ 250µA
4.1 nC @ 4.5 V
±20V
210 pF @ 30 V
-
1W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
3,270
In Stock
1 : ¥10.75000
Cut Tape (CT)
2,000 : ¥2.91555
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
8A (Ta)
6V, 10V
104mOhm @ 4A, 10V
3V @ 1mA
19 nC @ 10 V
+10V, -20V
890 pF @ 10 V
-
27W (Tc)
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.