Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

FDS6681Z MOSFET P-CH 30V 20A 8SOIC onsemi	19,376 In Stock	1 : ¥17.24000 Cut Tape (CT) 2,500 : ¥7.79035 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	20A (Ta)	4.5V, 10V	4.6mOhm @ 20A, 10V	3V @ 250µA	260 nC @ 10 V	±25V	7540 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IRF3415PBF MOSFET N-CH 150V 43A TO220AB Infineon Technologies	6,655 In Stock	1 : ¥17.57000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	43A (Tc)	10V	42mOhm @ 22A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	2400 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BSS138TA MOSFET N-CH 50V 200MA SOT23-3 Diodes Incorporated	13,717 In Stock	1 : ¥3.28000 Cut Tape (CT) 3,000 : ¥0.58848 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Ta)	10V	3.5Ohm @ 220mA, 10V	1.5V @ 250µA	-	±20V	50 pF @ 10 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRFB4615PBF MOSFET N-CH 150V 35A TO220AB Infineon Technologies	3,967 In Stock	1 : ¥14.86000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	35A (Tc)	10V	39mOhm @ 21A, 10V	5V @ 100µA	26 nC @ 10 V	±20V	1750 pF @ 50 V	-	144W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.