Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMG2305UX-7 MOSFET P-CH 20V 4.2A SOT23 Diodes Incorporated	162,271 In Stock 2,355,000 Factory	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.52630 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.8V, 4.5V	52mOhm @ 4.2A, 4.5V	900mV @ 250µA	10.2 nC @ 4.5 V	±8V	808 pF @ 15 V	-	1.4W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
CSD25310Q2 MOSFET P-CH 20V 20A 6WSON Texas Instruments	44,282 In Stock	1 : ¥3.45000 Cut Tape (CT) 3,000 : ¥1.38540 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	20A (Ta)	1.8V, 4.5V	23.9mOhm @ 5A, 4.5V	1.1V @ 250µA	4.7 nC @ 4.5 V	±8V	655 pF @ 10 V	-	2.9W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-WSON (2x2)	6-WDFN Exposed Pad
DMN3065LW-13 MOSFET N-CH 30V 4A SOT323 Diodes Incorporated	149,904 In Stock 8,300,000 Factory	1 : ¥3.61000 Cut Tape (CT) 10,000 : ¥0.68838 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	4A (Ta)	2.5V, 10V	52mOhm @ 4A, 10V	1.5V @ 250µA	11.7 nC @ 10 V	±12V	465 pF @ 15 V	-	770mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
CSD13202Q2 MOSFET N-CH 12V 22A 6WSON Texas Instruments	10,468 In Stock	1 : ¥4.60000 Cut Tape (CT) 3,000 : ¥1.55327 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	12 V	22A (Ta)	2.5V, 4.5V	9.3mOhm @ 5A, 4.5V	1.1V @ 250µA	6.6 nC @ 4.5 V	±8V	997 pF @ 6 V	-	2.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-WSON (2x2)	6-WDFN Exposed Pad

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.