Single FETs, MOSFETs

Results: 9
Manufacturer
Diodes IncorporatedInfineon TechnologiesonsemiToshiba Semiconductor and Storage
Series
-OptiMOS™OptiMOS™ 2OptiMOS™ 5OptiMOS™ 6
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
120 V150 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta), 58A (Tc)11A (Ta), 63A (Tc)12A (Ta), 79A (Tc)12A (Ta), 99A (Tc)13.4A (Ta), 86A (Tc)64A (Tc)80A (Tc)84A (Tc)87A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
3.3V, 10V4.5V, 10V6V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
7.3mOhm @ 40A, 10V8mOhm @ 36A, 10V8mOhm @ 50A, 10V8.9mOhm @ 30A, 10V9mOhm @ 32A, 10V9.3mOhm @ 40A, 109.3mOhm @ 44A, 10V10.4mOhm @ 28A, 10V17.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 35µA2.2V @ 50µA2.4V @ 112µA2.6V @ 250µA4V @ 200µA4V @ 250µA4.3V @ 1mA4.6V @ 107µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V33 nC @ 10 V36 nC @ 10 V40.7 nC @ 10 V44 nC @ 10 V50 nC @ 10 V79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 60 V2400 pF @ 75 V2600 pF @ 60 V2705 pF @ 60 V3142 pF @ 60 V3230 pF @ 75 V3369 pF @ 75 V5400 pF @ 75 V7400 pF @ 60 V
Power Dissipation (Max)
960mW (Ta), 210W (Tc)1.3W (Ta)2.7W (Ta), 102W (Tc)3W (Ta), 125W (Tc)3W (Ta), 94W (Tc)3.5W139W (Tc)156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C
Mounting Type
Surface MountSurface Mount, Wettable Flank
Supplier Device Package
5-DFN (5x6) (8-SOFL)8-SOP Advance (5x5)PG-TDSON-8PG-TDSON-8-7PowerDI5060-8PowerDI5060-8 (Type UX)
Package / Case
8-PowerTDFN8-PowerTDFN, 5 Leads8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC093N15NS5ATMA1
MOSFET N-CH 150V 87A TDSON
Infineon Technologies
1,171
In Stock
1 : ¥27.34000
Cut Tape (CT)
5,000 : ¥12.77754
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
87A (Tc)
8V, 10V
9.3mOhm @ 44A, 10V
4.6V @ 107µA
40.7 nC @ 10 V
±20V
3230 pF @ 75 V
-
139W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
PowerDI5060-8
DMT15H017LPS-13
MOSFET BVDSS: 101V~250V POWERDI5
Diodes Incorporated
1,445
In Stock
5,000
Factory
1 : ¥13.14000
Cut Tape (CT)
2,500 : ¥5.42852
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
9.4A (Ta), 58A (Tc)
4.5V, 10V
17.5mOhm @ 20A, 10V
2.6V @ 250µA
50 nC @ 10 V
±20V
3369 pF @ 75 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerDI5060-8
8-PowerTDFN
ISC104N12LM6ATMA1
ISC104N12LM6ATMA1
OPTIMOS 6 POWER-TRANSISTOR,120V
Infineon Technologies
8,181
In Stock
1 : ¥15.19000
Cut Tape (CT)
5,000 : ¥6.60699
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
11A (Ta), 63A (Tc)
3.3V, 10V
10.4mOhm @ 28A, 10V
2.2V @ 35µA
26 nC @ 10 V
±20V
1800 pF @ 60 V
-
3W (Ta), 94W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8
8-PowerTDFN
10,781
In Stock
1 : ¥15.27000
Cut Tape (CT)
5,000 : ¥6.61915
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
64A (Tc)
8V, 10V
9mOhm @ 32A, 10V
4.3V @ 1mA
44 nC @ 10 V
±20V
5400 pF @ 75 V
-
960mW (Ta), 210W (Tc)
175°C
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
8-Power TDFN
BSC0302LSATMA1
MOSFET N-CH 120V 12A/99A TDSON
Infineon Technologies
9,943
In Stock
1 : ¥17.40000
Cut Tape (CT)
5,000 : ¥7.55479
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
12A (Ta), 99A (Tc)
4.5V, 10V
8mOhm @ 50A, 10V
2.4V @ 112µA
79 nC @ 10 V
±20V
7400 pF @ 60 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
ISC073N12LM6ATMA1
ISC073N12LM6ATMA1
OPTIMOS 6 POWER-TRANSISTOR,120V
Infineon Technologies
6,734
In Stock
1 : ¥20.94000
Cut Tape (CT)
5,000 : ¥9.07466
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
13.4A (Ta), 86A (Tc)
3.3V, 10V
7.3mOhm @ 40A, 10V
2.2V @ 50µA
36 nC @ 10 V
±20V
2600 pF @ 60 V
-
3W (Ta), 125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8
8-PowerTDFN
5-DFN, 8-SO Flat Lead
NTMFS008N12MCT1G
SINGLE N-CHANNEL POWER MOSFET 12
onsemi
696
In Stock
3,000
Factory
1 : ¥19.21000
Cut Tape (CT)
1,500 : ¥9.11863
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
12A (Ta), 79A (Tc)
6V, 10V
8mOhm @ 36A, 10V
4V @ 200µA
33 nC @ 10 V
±20V
2705 pF @ 60 V
-
2.7W (Ta), 102W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
BSCXXXX
BSC0402NSATMA1
MOSFET N-CH 150V 80A TDSON-8
Infineon Technologies
0
In Stock
1 : ¥23.07000
Cut Tape (CT)
5,000 : ¥10.76818
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
150 V
80A (Tc)
8V, 10V
9.3mOhm @ 40A, 10
4.6V @ 107µA
33 nC @ 10 V
±20V
2400 pF @ 75 V
-
139W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
PowerDI5060 UX
DMTH12H007SPSWQ-13
MOSFET BVDSS: 101V~250V PowerDI5
Diodes Incorporated
0
In Stock
2,500
Factory
Check Lead Time
2,500 : ¥6.89443
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
120 V
84A (Tc)
6V, 10V
8.9mOhm @ 30A, 10V
4V @ 250µA
44 nC @ 10 V
±20V
3142 pF @ 60 V
-
3.5W
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.