Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.onsemi
Series
aMOS5™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V600 V
Current - Continuous Drain (Id) @ 25°C
12.5A (Ta), 50A (Tc)14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
10.2mOhm @ 12.5A, 10V280mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23.5 nC @ 10 V35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 100 V2265 pF @ 50 V
Power Dissipation (Max)
3.1W (Ta), 127W (Tc)138W (Tc)
Supplier Device Package
TO-252 (DPAK)TO-252AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252AA
FDD86110
MOSFET N-CH 100V 12.5A/50A DPAK
onsemi
5,772
In Stock
1 : ¥21.76000
Cut Tape (CT)
2,500 : ¥9.82284
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
12.5A (Ta), 50A (Tc)
6V, 10V
10.2mOhm @ 12.5A, 10V
4V @ 250µA
35 nC @ 10 V
±20V
2265 pF @ 50 V
-
3.1W (Ta), 127W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
3,152
In Stock
1 : ¥11.17000
Cut Tape (CT)
2,500 : ¥6.64994
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
14A (Tc)
10V
280mOhm @ 7A, 10V
3V @ 250µA
23.5 nC @ 10 V
±20V
1350 pF @ 100 V
-
138W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.