Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSC040N10NS5ATMA1 MOSFET N-CH 100V 100A TDSON Infineon Technologies	53,644 In Stock	1 : ¥22.00000 Cut Tape (CT) 5,000 : ¥9.54166 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	6V, 10V	4mOhm @ 50A, 10V	3.8V @ 95µA	72 nC @ 10 V	±20V	5300 pF @ 50 V	-	2.5W (Ta), 139W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
CSD19536KTTT MOSFET N-CH 100V 200A DDPAK Texas Instruments	1,757 In Stock	1 : ¥51.64000 Cut Tape (CT) 50 : ¥40.93740 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200A (Ta)	6V, 10V	2.4mOhm @ 100A, 10V	3.2V @ 250µA	153 nC @ 10 V	±20V	12000 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (DDPAK-3)	TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
CSD18511Q5A MOSFET N-CH 40V 159A 8VSON Texas Instruments	4,576 In Stock	1 : ¥9.11000 Cut Tape (CT) 2,500 : ¥3.76374 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	159A (Tc)	4.5V, 10V	3.5mOhm @ 24A, 4.5V	2.45V @ 250µA	63 nC @ 10 V	±20V	5850 pF @ 10 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VSONP (5x6)	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.