Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
270mA (Ta)3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
75mOhm @ 3A, 10V2.8Ohm @ 300mA, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V5 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 30 V180 pF @ 20 V
Power Dissipation (Max)
270mW (Ta), 1.3W (Tc)615mW (Ta), 7.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Stocking Options
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV60ENEAR
MOSFET N-CH 40V 3A TO236AB
Nexperia USA Inc.
36,995
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.80459
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
3A (Ta)
4.5V, 10V
75mOhm @ 3A, 10V
2.5V @ 250µA
5 nC @ 10 V
±20V
180 pF @ 20 V
-
615mW (Ta), 7.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-236AB
NX6008NBKR
NX6008NBK/SOT23/TO-236AB
Nexperia USA Inc.
63,069
In Stock
1 : ¥1.72000
Cut Tape (CT)
3,000 : ¥0.29391
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
270mA (Ta)
1.5V, 4.5V
2.8Ohm @ 300mA, 4.5V
900mV @ 250µA
0.7 nC @ 4.5 V
±8V
27 pF @ 30 V
-
270mW (Ta), 1.3W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.