Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

NTTFS5116PLTAG MOSFET P-CH 60V 5.7A 8WDFN onsemi	14,385 In Stock	1 : ¥7.96000 Cut Tape (CT) 1,500 : ¥3.48435 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	5.7A (Ta)	4.5V, 10V	52mOhm @ 6A, 10V	3V @ 250µA	25 nC @ 10 V	±20V	1258 pF @ 30 V	-	3.2W (Ta), 40W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
SIS892DN-T1-GE3 MOSFET N-CH 100V 30A PPAK1212-8 Vishay Siliconix	3,753 In Stock	1 : ¥12.56000 Cut Tape (CT) 3,000 : ¥5.20649 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	30A (Tc)	4.5V, 10V	29mOhm @ 10A, 10V	3V @ 250µA	21.5 nC @ 10 V	±20V	611 pF @ 50 V	-	3.7W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
PJA3434_R1_00001 SOT-23, MOSFET Panjit International Inc.	4,971 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.49478 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	750mA (Ta)	1.2V, 4.5V	400mOhm @ 600mA, 4.5V	1V @ 250µA	1.4 nC @ 4.5 V	±10V	67 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.