Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon Technologies
Series
AlphaSGT™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
87A (Tc)214A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 20A, 10V9.3mOhm @ 44A, 10V
Vgs(th) (Max) @ Id
3.7V @ 250µA4.6V @ 107µA
Gate Charge (Qg) (Max) @ Vgs
40.7 nC @ 10 V115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3230 pF @ 75 V6460 pF @ 75 V
Power Dissipation (Max)
139W (Tc)500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TDSON-8-7TOLLA
Package / Case
8-PowerSFN8-PowerTDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC093N15NS5ATMA1
MOSFET N-CH 150V 87A TDSON
Infineon Technologies
1,796
In Stock
1 : ¥27.34000
Cut Tape (CT)
5,000 : ¥12.77754
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
87A (Tc)
8V, 10V
9.3mOhm @ 44A, 10V
4.6V @ 107µA
40.7 nC @ 10 V
±20V
3230 pF @ 75 V
-
139W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
1,813
In Stock
1 : ¥53.94000
Cut Tape (CT)
2,000 : ¥28.68814
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
214A (Tc)
10V
4.3mOhm @ 20A, 10V
3.7V @ 250µA
115 nC @ 10 V
±20V
6460 pF @ 75 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TOLLA
8-PowerSFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.