Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Vishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
4.1A (Ta)30A (Ta)
Rds On (Max) @ Id, Vgs
3mOhm @ 25A, 10V42mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.3 nC @ 10 V50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
209 pF @ 15 V5600 pF @ 15 V
Power Dissipation (Max)
510mW (Ta), 5W (Tc)5.4W (Ta)
Supplier Device Package
PowerPAK® SO-8TO-236AB
Package / Case
PowerPAK® SO-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV45EN2R
MOSFET N-CH 30V 4.1A TO236AB
Nexperia USA Inc.
48,368
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.93655
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4.1A (Ta)
4.5V, 10V
42mOhm @ 4.1A, 10V
2V @ 250µA
6.3 nC @ 10 V
±20V
209 pF @ 15 V
-
510mW (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
PowerPAK SO-8
SI7336ADP-T1-GE3
MOSFET N-CH 30V 30A PPAK SO-8
Vishay Siliconix
10,505
In Stock
1 : ¥14.20000
Cut Tape (CT)
3,000 : ¥6.40521
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
30A (Ta)
4.5V, 10V
3mOhm @ 25A, 10V
3V @ 250µA
50 nC @ 4.5 V
±20V
5600 pF @ 15 V
-
5.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.