Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMP21D0UT-7 MOSFET P-CH 20V 590MA SOT523 Diodes Incorporated	281,220 In Stock 891,000 Factory	1 : ¥3.04000 Cut Tape (CT) 3,000 : ¥0.66248 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	590mA (Ta)	1.8V, 4.5V	495mOhm @ 400mA, 4.5V	700mV @ 250µA (Typ)	1.54 nC @ 8 V	±8V	80 pF @ 10 V	-	240mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
AONS66920 MOSFET N-CH 100V 17.5A/48A 8DFN Alpha & Omega Semiconductor Inc.	111,374 In Stock	1 : ¥7.55000 Cut Tape (CT) 3,000 : ¥4.04333 Tape & Reel (TR)	AlphaSGT™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	17.5A (Ta), 48A (Tc)	4.5V, 10V	8.2mOhm @ 20A, 10V	2.5V @ 250µA	50 nC @ 10 V	±20V	2500 pF @ 50 V	-	5W (Ta), 56.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
CSD13381F4 MOSFET N-CH 12V 2.1A 3PICOSTAR Texas Instruments	466,552 In Stock	1 : ¥2.46000 Cut Tape (CT) 3,000 : ¥0.43988 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	12 V	2.1A (Ta)	1.8V, 4.5V	180mOhm @ 500mA, 4.5V	1.1V @ 250µA	1.4 nC @ 4.5 V	8V	200 pF @ 6 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	3-PICOSTAR	3-XFDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.