Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7002K-T1-E3 MOSFET N-CH 60V 300MA SOT23-3 Vishay Siliconix	497,758 In Stock	1 : ¥2.30000 Cut Tape (CT) 3,000 : ¥0.39032 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	300mA (Ta)	4.5V, 10V	2Ohm @ 500mA, 10V	2.5V @ 250µA	0.6 nC @ 4.5 V	±20V	30 pF @ 25 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BSS214NWH6327XTSA1 MOSFET N-CH 20V 1.5A SOT323-3 Infineon Technologies	185,796 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥0.65569 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.5A (Ta)	2.5V, 4.5V	140mOhm @ 1.5A, 4.5V	1.2V @ 3.7µA	0.8 nC @ 5 V	±12V	143 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT323	SC-70, SOT-323
DMP3036SSS-13 MOSFET P-CH 30V 19.5A 8SO Diodes Incorporated	9,026 In Stock 65,000 Factory	1 : ¥5.91000 Cut Tape (CT) 2,500 : ¥2.23911 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	19.5A (Tc)	5V, 10V	20mOhm @ 9A, 10V	3V @ 250µA	16.5 nC @ 10 V	±25V	1931 pF @ 15 V	-	1.4W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.