Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesRohm Semiconductor
Series
-OptiMOS™-5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V40 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)40A (Tc)
Rds On (Max) @ Id, Vgs
2.8mOhm @ 20A, 10V470mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA2V @ 30µA
Vgs (Max)
±8V±16V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V2800 pF @ 25 V
Power Dissipation (Max)
1W71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
DFN1010-3WPG-TSDSON-8
Package / Case
3-XFDFN8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
IPZ40N04S5L2R8ATMA1
MOSFET N-CH 40V 40A 8TSDSON
Infineon Technologies
28,103
In Stock
1 : ¥9.69000
Cut Tape (CT)
5,000 : ¥3.82779
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
40A (Tc)
4.5V, 10V
2.8mOhm @ 20A, 10V
2V @ 30µA
52 nC @ 10 V
±16V
2800 pF @ 25 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TSDSON-8
8-PowerVDFN
DFN1010
RV8C010UNHZGG2CR
MOSFET N-CH 20V 1A DFN1010-3W
Rohm Semiconductor
8,910
In Stock
1 : ¥4.76000
Cut Tape (CT)
8,000 : ¥1.53234
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1A (Ta)
-
470mOhm @ 500mA, 4.5V
1V @ 1mA
-
±8V
40 pF @ 10 V
-
1W
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN1010-3W
3-XFDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.