Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IPB64N25S320ATMA1 MOSFET N-CH 250V 64A TO263-3 Infineon Technologies	4,985 In Stock	1 : ¥52.95000 Cut Tape (CT) 1,000 : ¥27.39226 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	250 V	64A (Tc)	10V	20mOhm @ 64A, 10V	4V @ 270µA	89 nC @ 10 V	±20V	7000 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVMFS5C645NLWFAFT1G MOSFET N-CH 60V 22A 5DFN onsemi	1,019 In Stock	1 : ¥23.48000 Cut Tape (CT) 1,500 : ¥11.14392 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	22A (Ta)	4.5V, 10V	4mOhm @ 50A, 10V	2V @ 250µA	34 nC @ 10 V	±20V	2200 pF @ 50 V	-	79W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
E3M0060065K 60M 650V SIC AUTOMOTIVE MOSFET Wolfspeed, Inc.	13 In Stock	1 : ¥131.84000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	37A (Tc)	15V	79mOhm @ 13.2A, 15V	3.6V @ 3.6mA	49 nC @ 15 V	+19V, -8V	1170 pF @ 600 V	-	131W (Tc)	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L	TO-247-4

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.