Single Bipolar Transistors

Results: 4
Manufacturer
Central Semiconductor Corponsemi
Packaging
BulkTube
Transistor Type
NPNPNPPNP - Darlington
Current - Collector (Ic) (Max)
1 A5 A
Voltage - Collector Emitter Breakdown (Max)
40 V100 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 125mA, 1A4V @ 20mA, 5A-
Current - Collector Cutoff (Max)
50nA (ICBO)300µA500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A, 4V100 @ 10mA, 1V1000 @ 3A, 3V
Frequency - Transition
3MHz250MHz300MHz-
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-220TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
Showing
of 4
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-220-3
TIP127G
TRANS PNP DARL 100V 5A TO220
onsemi
5,706
In Stock
1 : ¥6.98000
Tube
-
Tube
Active
PNP - Darlington
5 A
100 V
4V @ 20mA, 5A
500µA
1000 @ 3A, 3V
2 W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
29,499
In Stock
1 : ¥3.45000
Bulk
-
Bulk
Active
NPN
-
40 V
-
50nA (ICBO)
100 @ 10mA, 1V
-
300MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
8,530
In Stock
1 : ¥3.45000
Bulk
-
Bulk
Active
PNP
-
40 V
-
50nA (ICBO)
100 @ 10mA, 1V
-
250MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-220-3
TIP29CG
TRANS NPN 100V 1A TO220
onsemi
0
In Stock
Check Lead Time
1 : ¥14.04000
Tube
-
Tube
Active
NPN
1 A
100 V
700mV @ 125mA, 1A
300µA
15 @ 1A, 4V
2 W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
Showing
of 4

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.