Single Bipolar Transistors

Results: 4
Manufacturer
Central Semiconductor CorponsemiSTMicroelectronics
Packaging
BulkTube
Transistor Type
NPNPNP - Darlington
Current - Collector (Ic) (Max)
50 mA200 mA5 A6 A
Voltage - Collector Emitter Breakdown (Max)
30 V40 V100 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA500mV @ 1mA, 10mA1.5V @ 600mA, 6A4V @ 20mA, 5A
Current - Collector Cutoff (Max)
50nA (ICBO)500µA700µA-
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A, 4V100 @ 10mA, 1V300 @ 100µA, 5V1000 @ 3A, 3V
Power - Max
625 mW2 W
Frequency - Transition
3MHz50MHz300MHz-
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-220TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3(StandardBody),TO-226_straightlead
2N3904BU
TRANS NPN 40V 0.2A TO92-3
onsemi
97,563
In Stock
1 : ¥2.87000
Bulk
-
Bulk
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-220-3
TIP127
TRANS PNP DARL 100V 5A TO220
STMicroelectronics
2,828
In Stock
1 : ¥6.32000
Tube
-
Tube
Active
PNP - Darlington
5 A
100 V
4V @ 20mA, 5A
500µA
1000 @ 3A, 3V
2 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
TIP41CG
TRANS NPN 100V 6A TO220
onsemi
17,685
In Stock
1 : ¥9.52000
Tube
-
Tube
Active
NPN
6 A
100 V
1.5V @ 600mA, 6A
700µA
15 @ 3A, 4V
2 W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
631
In Stock
1 : ¥3.86000
Bulk
-
Bulk
Active
NPN
50 mA
30 V
500mV @ 1mA, 10mA
50nA (ICBO)
300 @ 100µA, 5V
625 mW
50MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.