Single Bipolar Transistors

Results: 3
Manufacturer
Central Semiconductor CorpDiodes Incorporated
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
500 mA600 mA
Voltage - Collector Emitter Breakdown (Max)
30 V160 V300 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA500mV @ 2mA, 20mA-
Current - Collector Cutoff (Max)
50nA (ICBO)100nA (ICBO)250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 30mA, 10V80 @ 10mA, 5V180 @ 1mA, 5V
Frequency - Transition
50MHz300MHz-
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)TO-261-4, TO-261AA
Supplier Device Package
SOT-223-3TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-223-3
DZT5551-13
TRANS NPN 160V 0.6A SOT223-3
Diodes Incorporated
71,177
In Stock
1,667,500
Factory
1 : ¥3.28000
Cut Tape (CT)
2,500 : ¥1.10074
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
600 mA
160 V
200mV @ 5mA, 50mA
50nA (ICBO)
80 @ 10mA, 5V
1 W
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
SOT-223-3
DZTA92-13
TRANS PNP 300V 0.5A SOT223-3
Diodes Incorporated
8,294
In Stock
165,000
Factory
1 : ¥2.55000
Cut Tape (CT)
2,500 : ¥1.02622
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
500 mA
300 V
500mV @ 2mA, 20mA
250nA (ICBO)
25 @ 30mA, 10V
1 W
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
0
In Stock
Check Lead Time
2,500 : ¥1.61444
Bulk
-
Bulk
Active
NPN
-
30 V
-
100nA (ICBO)
180 @ 1mA, 5V
-
-
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
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of 3

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.