Single Bipolar Transistors

Results: 3
Manufacturer
onsemiSTMicroelectronics
Packaging
Cut Tape (CT)Tape & Box (TB)Tape & Reel (TR)Tube
Transistor Type
PNPPNP - Darlington
Current - Collector (Ic) (Max)
200 mA5 A
Voltage - Collector Emitter Breakdown (Max)
40 V100 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA4V @ 20mA, 5A
Current - Collector Cutoff (Max)
500µA-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V1000 @ 3A, 3V
Power - Max
625 mW2 W
Frequency - Transition
250MHz-
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-220TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3 Formed Leads
2N3906TF
TRANS PNP 40V 0.2A TO92-3
onsemi
55,568
In Stock
42,000
Factory
1 : ¥2.63000
Cut Tape (CT)
2,000 : ¥0.44165
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
PNP
200 mA
40 V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-92-3 Formed Leads
2N3906TA
TRANS PNP 40V 0.2A TO92-3
onsemi
11,895
In Stock
1 : ¥2.63000
Cut Tape (CT)
2,000 : ¥0.44165
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
PNP
200 mA
40 V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-220-3
TIP127
TRANS PNP DARL 100V 5A TO220
STMicroelectronics
2,828
In Stock
1 : ¥6.32000
Tube
-
Tube
Active
PNP - Darlington
5 A
100 V
4V @ 20mA, 5A
500µA
1000 @ 3A, 3V
2 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
Showing
of 3

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.