Single Bipolar Transistors

Results: 3
Manufacturer
Diodes IncorporatedMicrochip Technologyonsemi
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
200 mA800 mA4 A
Voltage - Collector Emitter Breakdown (Max)
40 V50 V60 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 400mA, 4A300mV @ 5mA, 50mA1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
50nA50nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V100 @ 150mA, 10V100 @ 1A, 1V
Power - Max
500 mW625 mW1.2 W
Frequency - Transition
120MHz300MHz-
Operating Temperature
-65°C ~ 200°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 200°C (TJ)
Package / Case
E-Line-3TO-206AA, TO-18-3 Metal CanTO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
E-Line (TO-92 compatible)TO-18TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3(StandardBody),TO-226_straightlead
2N3904BU
TRANS NPN 40V 0.2A TO92-3
onsemi
95,625
In Stock
1 : ¥2.87000
Bulk
-
Bulk
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
ZTX951
TRANS PNP 60V 4A E-LINE
Diodes Incorporated
1,205
In Stock
1 : ¥8.46000
Bulk
-
Bulk
Active
PNP
4 A
60 V
300mV @ 400mA, 4A
50nA (ICBO)
100 @ 1A, 1V
1.2 W
120MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
TO-18
2N2222A
TRANS NPN 50V 0.8A TO18
Microchip Technology
0
In Stock
Check Lead Time
1 : ¥23.81000
Bulk
-
Bulk
Active
NPN
800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
Showing
of 3

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.