Single Bipolar Transistors

Results: 3
Manufacturer
onsemiSTMicroelectronics
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
100 mA1.5 A
Voltage - Collector Emitter Breakdown (Max)
30 V80 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 2V420 @ 2mA, 5V
Power - Max
300 mW1.25 W
Frequency - Transition
100MHz-
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Package / Case
TO-225AA, TO-126-3TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)SOT-32SOT-32-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
ST13003-K
BD139
TRANS NPN 80V 1.5A SOT32-3
STMicroelectronics
2,973
In Stock
1 : ¥3.37000
Tube
-
Tube
Active
NPN
1.5 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1.25 W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
SOT-32-3
SOT 23-3
NSVBC858CLT1G
TRANS PNP 30V 0.1A SOT23-3
onsemi
5,498
In Stock
1 : ¥1.15000
Cut Tape (CT)
3,000 : ¥0.19556
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
100 mA
30 V
650mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
ST13003-K
BD139-10
TRANS NPN 80V 1.5A SOT32
STMicroelectronics
26
In Stock
1 : ¥3.37000
Tube
-
Tube
Active
NPN
1.5 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1.25 W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
SOT-32
Showing
of 3

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.