Single Bipolar Transistors

Results: 2
Manufacturer
Nexperia USA Inc.onsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNNPN - Darlington
Current - Collector (Ic) (Max)
200 mA500 mA
Voltage - Collector Emitter Breakdown (Max)
40 V60 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA1V @ 100µA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V10000 @ 100mA, 5V
Power - Max
300 mW1.3 W
Frequency - Transition
220MHz300MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-243AA
Supplier Device Package
SOT-23-3 (TO-236)SOT-89
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
MMBT3904LT1G
TRANS NPN 40V 0.2A SOT23-3
onsemi
1,345,368
In Stock
1 : ¥0.99000
Cut Tape (CT)
3,000 : ¥0.17514
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
300 mW
300MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
SOT-89
BCV49,115
TRANS NPN DARL 60V 0.5A SOT89
Nexperia USA Inc.
1,063
In Stock
1 : ¥4.02000
Cut Tape (CT)
1,000 : ¥1.17630
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN - Darlington
500 mA
60 V
1V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
1.3 W
220MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-243AA
SOT-89
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of 2

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.