Single Bipolar Transistors

Results: 4
Packaging
BulkCut Tape (CT)Tape & Box (TB)
Current - Collector (Ic) (Max)
200 mA600 mA1 A
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA750mV @ 50mA, 500mA1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V100 @ 150mA, 10V100 @ 150mA, 1V
Frequency - Transition
250MHz300MHz
Package / Case
TO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3(StandardBody),TO-226_straightlead
2N3904BU
TRANS NPN 40V 0.2A TO92-3
onsemi
94,135
In Stock
1 : ¥2.87000
Bulk
-
Bulk
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
PN2222ABU
TRANS NPN 40V 1A TO92-3
onsemi
2,976
In Stock
1 : ¥3.28000
Bulk
-
Bulk
Active
NPN
1 A
40 V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
2N4401BU
BJT TO92 40V NPN 0.25W 150C
onsemi
26,487
In Stock
1 : ¥2.63000
Bulk
-
Bulk
Active
NPN
600 mA
40 V
750mV @ 50mA, 500mA
-
100 @ 150mA, 1V
625 mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-92-3 Formed Leads
2N3904TAR
TRANS NPN 40V 0.2A TO92-3
onsemi
24,635
In Stock
132,000
Factory
1 : ¥2.87000
Cut Tape (CT)
2,000 : ¥0.48194
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
Showing
of 4

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.