Single Bipolar Transistors

Results: 2
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes Incorporated
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
600 mA5 A
Voltage - Collector Emitter Breakdown (Max)
40 V50 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 500mA, 5A1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V200 @ 500mA, 2V
Power - Max
350 mW1.2 W
Frequency - Transition
190MHz300MHz
Operating Temperature
-55°C ~ 150°C-55°C ~ 150°C (TJ)
Supplier Device Package
SOT-23SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-23-3
ZXTP2025FTA
TRANS PNP 50V 5A SOT23-3
Diodes Incorporated
27,539
In Stock
702,000
Factory
1 : ¥6.57000
Cut Tape (CT)
3,000 : ¥2.48136
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
5 A
50 V
200mV @ 500mA, 5A
20nA (ICBO)
200 @ 500mA, 2V
1.2 W
190MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MMBT2222A
MMBT2222A
GENERAL PURPOSE TRANSISTOR NPN S
ANBON SEMICONDUCTOR (INT'L) LIMITED
275,825
In Stock
1 : ¥0.82000
Cut Tape (CT)
3,000 : ¥0.14835
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
600 mA
40 V
1V @ 50mA, 500mA
10nA
100 @ 150mA, 10V
350 mW
300MHz
-55°C ~ 150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
Showing
of 2

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.