Single Bipolar Transistors

Results: 2
Manufacturer
Diodes IncorporatedSTMicroelectronics
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Transistor Type
NPNNPN - Darlington
Current - Collector (Ic) (Max)
2 A10 A
Voltage - Collector Emitter Breakdown (Max)
50 V100 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A2.5V @ 6mA, 3A
Current - Collector Cutoff (Max)
100nA500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA, 2V750 @ 3A, 3V
Power - Max
1.45 W70 W
Frequency - Transition
65MHz-
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Package / Case
TO-220-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
TO-220TO-252 (DPAK)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
TO-220-3
BDX33C
TRANS NPN DARL 100V 10A TO220
STMicroelectronics
3,342
In Stock
1 : ¥7.55000
Tube
-
Tube
Active
NPN - Darlington
10 A
100 V
2.5V @ 6mA, 3A
500µA
750 @ 3A, 3V
70 W
-
150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220
TO-252 D-Pak Top
MJD2873Q-13
PWR HI VOLTAGE TRANSISTOR TO252
Diodes Incorporated
2,450
In Stock
2,500
Factory
1 : ¥3.69000
Cut Tape (CT)
2,500 : ¥1.05187
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
2 A
50 V
300mV @ 50mA, 1A
100nA
120 @ 500mA, 2V
1.45 W
65MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
Showing
of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.