Single Bipolar Transistors

Results: 3
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
100 mA500 mA2 A
Voltage - Collector Emitter Breakdown (Max)
35 V45 V300 V
Vce Saturation (Max) @ Ib, Ic
310mV @ 20mA, 2A500mV @ 2mA, 20mA500mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
100nA250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 30mA, 10V100 @ 1.5A, 1.5V200 @ 2mA, 5V
Power - Max
200 mW300 mW625 mW
Frequency - Transition
50MHz100MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
SOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3
Supplier Device Package
6-TSOPSOT-23SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
MMBTA92LT1G
TRANS PNP 300V 0.5A SOT23-3
onsemi
92,894
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.27853
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
500 mA
300 V
500mV @ 2mA, 20mA
250nA (ICBO)
25 @ 30mA, 10V
300 mW
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
6-TSOP
MBT35200MT1G
TRANS PNP 35V 2A 6TSOP
onsemi
2,846
In Stock
144,000
Factory
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.26097
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
2 A
35 V
310mV @ 20mA, 2A
100nA
100 @ 1.5A, 1.5V
625 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
BC847B
BC847B
PLASTIC ENCAPSULATE TRANSISTORS
ANBON SEMICONDUCTOR (INT'L) LIMITED
74,445
In Stock
1 : ¥0.82000
Cut Tape (CT)
3,000 : ¥0.13188
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
100 mA
45 V
500mV @ 5mA, 100mA
100nA
200 @ 2mA, 5V
200 mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
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Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.