Single Bipolar Transistors

Results: 4
Manufacturer
Diodes Incorporatedonsemi
Packaging
BulkCut Tape (CT)Tape & Reel (TR)
Transistor Type
NPNPNPPNP - Darlington
Current - Collector (Ic) (Max)
200 mA1 A2 A
Voltage - Collector Emitter Breakdown (Max)
30 V40 V45 V60 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 15mA, 150mA300mV @ 5mA, 50mA500mV @ 200mA, 2A1V @ 100µA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 2A, 2V100 @ 10mA, 1V100 @ 150mA, 10V30000 @ 20mA, 2V
Power - Max
625 mW1 W
Frequency - Transition
75MHz150MHz200MHz300MHz
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 200°C (TJ)150°C (TJ)
Package / Case
E-Line-3TO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
E-Line (TO-92 compatible)TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3(StandardBody),TO-226_straightlead
2N3904BU
TRANS NPN 40V 0.2A TO92-3
onsemi
97,563
In Stock
1 : ¥2.87000
Bulk
-
Bulk
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-92-3 Formed Leads
BC516-D27Z
TRANS PNP DARL 30V 1A TO92-3
onsemi
7,295
In Stock
62,000
Factory
1 : ¥3.12000
Cut Tape (CT)
2,000 : ¥0.69316
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
PNP - Darlington
1 A
30 V
1V @ 100µA, 100mA
100nA (ICBO)
30000 @ 20mA, 2V
625 mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-92-3 Formed Leads
MPS751-D26Z
TRANS PNP 60V 2A TO92-3
onsemi
3,684
In Stock
1 : ¥3.37000
Cut Tape (CT)
2,000 : ¥1.14355
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
PNP
2 A
60 V
500mV @ 200mA, 2A
100nA (ICBO)
40 @ 2A, 2V
625 mW
75MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
ZTX450
TRANS NPN 45V 1A E-LINE
Diodes Incorporated
2,620
In Stock
1 : ¥6.40000
Bulk
-
Bulk
Active
NPN
1 A
45 V
250mV @ 15mA, 150mA
100nA (ICBO)
100 @ 150mA, 10V
1 W
150MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.