Single Bipolar Transistors

Results: 2
Manufacturer
onsemiRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
500 mA5 A
Voltage - Collector Emitter Breakdown (Max)
30 V45 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 100mA, 2A700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA, 1V200 @ 500mA, 3V
Power - Max
300 mW10 W
Frequency - Transition
100MHz300MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
SOT-23-3 (TO-236)TO-252
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
BC807-25LT1G
TRANS PNP 45V 0.5A SOT23-3
onsemi
51,712
In Stock
1 : ¥1.15000
Cut Tape (CT)
3,000 : ¥0.19370
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
160 @ 100mA, 1V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
RB098BM-40FNSTL
2SCR572D3TL1
TRANS NPN 30V 5A TO252
Rohm Semiconductor
13,554
In Stock
1 : ¥4.84000
Cut Tape (CT)
2,500 : ¥2.57584
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
5 A
30 V
400mV @ 100mA, 2A
1µA (ICBO)
200 @ 500mA, 3V
10 W
300MHz
150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
Showing
of 2

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.