Single Bipolar Transistors

Results: 6
Manufacturer
onsemiSTMicroelectronics
Packaging
BulkTube
Product Status
ActiveLast Time Buy
Transistor Type
NPNNPN - DarlingtonPNP - Darlington
Current - Collector (Ic) (Max)
600 mA8 A
Voltage - Collector Emitter Breakdown (Max)
40 V100 V
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA2V @ 12mA, 3A2.5V @ 80mA, 8A4V @ 30mA, 6A
Current - Collector Cutoff (Max)
50µA500µA-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 1V750 @ 3A, 3V1000 @ 3A, 4V1000 @ 4A, 4V
Power - Max
625 mW2 W60 W
Frequency - Transition
250MHz-
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-220TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
6Results

Showing
of 6
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3(StandardBody),TO-226_straightlead
2N4401BU
BJT TO92 40V NPN 0.25W 150C
onsemi
26,310
In Stock
1 : ¥2.63000
Bulk
-
Bulk
Active
NPN
600 mA
40 V
750mV @ 50mA, 500mA
-
100 @ 150mA, 1V
625 mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-220-3
TIP102
TRANS NPN DARL 100V 8A TO220
STMicroelectronics
6,267
In Stock
1 : ¥7.72000
Tube
-
Tube
Active
NPN - Darlington
8 A
100 V
2.5V @ 80mA, 8A
50µA
1000 @ 3A, 4V
2 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
TIP107G
TRANS PNP DARL 100V 8A TO220
onsemi
2,895
In Stock
1 : ¥8.87000
Tube
-
Tube
Active
PNP - Darlington
8 A
100 V
2.5V @ 80mA, 8A
50µA
1000 @ 3A, 4V
2 W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
TIP102G
TRANS NPN DARL 100V 8A TO220
onsemi
83
In Stock
1 : ¥12.31000
Tube
-
Tube
Active
NPN - Darlington
8 A
100 V
2.5V @ 80mA, 8A
50µA
1000 @ 3A, 4V
2 W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
TIP132
TRANS NPN DARL 100V 8A TO220
STMicroelectronics
0
In Stock
1 : ¥7.06000
Tube
-
Tube
Last Time Buy
NPN - Darlington
8 A
100 V
4V @ 30mA, 6A
500µA
1000 @ 4A, 4V
2 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
BDX53C
TRANS NPN DARL 100V 8A TO220
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥7.55000
Tube
-
Tube
Active
NPN - Darlington
8 A
100 V
2V @ 12mA, 3A
500µA
750 @ 3A, 3V
60 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
Showing
of 6

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.