Single Bipolar Transistors

Results: 3
Manufacturer
Diodes IncorporatedMicrochip Technologyonsemi
Series
-2N2222
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNNPN - Darlington
Current - Collector (Ic) (Max)
600 mA800 mA1.5 A
Voltage - Collector Emitter Breakdown (Max)
40 V50 V120 V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)
10nA (ICBO)50nA10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V2000 @ 1A, 5V
Power - Max
225 mW500 mW2 W
Frequency - Transition
150MHz300MHz-
Operating Temperature
-65°C ~ 200°C (TJ)-55°C ~ 150°C (TJ)
Package / Case
3-SMD, No LeadTO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Supplier Device Package
SOT-223-3SOT-23-3 (TO-236)UB
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
MMBT2222ALT1G
TRANS NPN 40V 0.6A SOT23-3
onsemi
627,371
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.21636
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
600 mA
40 V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
225 mW
300MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
SOT-223-3
FZT605TA
TRANS NPN DARL 120V 1.5A SOT223
Diodes Incorporated
29,782
In Stock
184,000
Factory
1 : ¥5.58000
Cut Tape (CT)
1,000 : ¥2.38807
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN - Darlington
1.5 A
120 V
1.5V @ 1mA, 1A
10µA
2000 @ 1A, 5V
2 W
150MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
UB
2N2222AUB
TRANS NPN 50V 0.8A 3SMD
Microchip Technology
4,947
In Stock
1 : ¥47.37000
Bulk
Bulk
Active
NPN
800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
-
-
Surface Mount
3-SMD, No Lead
UB
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of 3

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.