Single Bipolar Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

TIP120G TRANS NPN DARL 60V 5A TO220 onsemi	5,212 In Stock	1 : ¥5.83000 Tube	-	Tube	Active	NPN - Darlington	5 A	60 V	4V @ 20mA, 5A	500µA	1000 @ 3A, 3V	2 W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
TIP120 TRANS NPN DARL 60V 5A TO220 STMicroelectronics	1,725 In Stock	1 : ¥6.16000 Tube	-	Tube	Active	NPN - Darlington	5 A	60 V	4V @ 20mA, 5A	500µA	1000 @ 3A, 3V	2 W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220

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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.