Single Bipolar Transistors

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Collector (Ic) (Max)
200 mA300 mA
Voltage - Collector Emitter Breakdown (Max)
40 V160 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V100 @ 10mA, 1V
Power - Max
250 mW435 mW
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
3-XFDFNTO-236-3, SC-59, SOT-23-3
Supplier Device Package
TO-236ABX2-DFN0806-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
TO-236AB
PMBT5551,215
TRANS NPN 160V 0.3A TO236AB
Nexperia USA Inc.
10,394
In Stock
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.36060
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
300 mA
160 V
200mV @ 5mA, 50mA
50nA (ICBO)
80 @ 10mA, 5V
250 mW
300MHz
150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
3-XFDFN
MMBT3904FA-7B
TRANS NPN 40V 0.2A 3DFN
Diodes Incorporated
30,474
In Stock
100,000
Factory
1 : ¥3.12000
Cut Tape (CT)
10,000 : ¥0.73545
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
435 mW
300MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
3-XFDFN
X2-DFN0806-3
Showing
of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.