Single Bipolar Transistors

Results: 3
Packaging
BulkCut Tape (CT)Tape & Box (TB)
Transistor Type
NPNNPN - Darlington
Current - Collector (Ic) (Max)
200 mA500 mA1.2 A
Voltage - Collector Emitter Breakdown (Max)
30 V40 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA1V @ 100µA, 100mA1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V10000 @ 100mA, 5V30000 @ 20mA, 2V
Frequency - Transition
125MHz300MHz-
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3(StandardBody),TO-226_straightlead
2N3904BU
TRANS NPN 40V 0.2A TO92-3
onsemi
95,625
In Stock
1 : ¥2.87000
Bulk
-
Bulk
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-92-3 Formed Leads
BC517-D74Z
TRANS NPN DARL 30V 1.2A TO92-3
onsemi
22,599
In Stock
1 : ¥2.63000
Cut Tape (CT)
2,000 : ¥0.58951
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
NPN - Darlington
1.2 A
30 V
1V @ 100µA, 100mA
100nA (ICBO)
30000 @ 20mA, 2V
625 mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-92-3 Formed Leads
KSP13TA
TRANS NPN DARL 30V 0.5A TO92-3
onsemi
1,990
In Stock
1 : ¥2.87000
Cut Tape (CT)
2,000 : ¥0.64689
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
NPN - Darlington
500 mA
30 V
1.5V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
625 mW
125MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
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of 3

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.