Single Bipolar Transistors

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
500 mA600 mA
Voltage - Collector Emitter Breakdown (Max)
40 V45 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA (ICBO)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V160 @ 100mA, 1V
Power - Max
300 mW460 mW
Frequency - Transition
100MHz300MHz
Package / Case
3-XFDFNTO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)X2-DFN1006-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
X2-DFN1006-3
MMBT2222ALP4-7B
TRANS NPN 40V 0.6A 3DFN
Diodes Incorporated
680,494
In Stock
280,000
Factory
1 : ¥1.81000
Cut Tape (CT)
10,000 : ¥0.20525
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
600 mA
40 V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
460 mW
300MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
3-XFDFN
X2-DFN1006-3
SOT 23-3
SBC807-25LT1G
TRANS PNP 45V 0.5A SOT23-3
onsemi
2,014
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.50395
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
160 @ 100mA, 1V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
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of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.