Single Bipolar Transistors

Results: 2
Packaging
BulkTube
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
1.5 A8 A
Voltage - Collector Emitter Breakdown (Max)
80 V150 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A, 2V40 @ 150mA, 2V
Power - Max
12.5 W50 W
Frequency - Transition
30MHz-
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Package / Case
TO-220-3TO-225AA, TO-126-3
Supplier Device Package
TO-126TO-220
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-126
BD139G
TRANS NPN 80V 1.5A TO126
onsemi
13,613
In Stock
1 : ¥4.19000
Bulk
-
Bulk
Active
NPN
1.5 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
12.5 W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
TO-220-3
MJE15031G
TRANS PNP 150V 8A TO220
onsemi
1,301
In Stock
1 : ¥12.56000
Tube
-
Tube
Active
PNP
8 A
150 V
500mV @ 100mA, 1A
100µA
20 @ 4A, 2V
50 W
30MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
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of 2

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.