Single Bipolar Transistors

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
100 mA600 mA
Voltage - Collector Emitter Breakdown (Max)
40 V65 V
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA (ICBO)15µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V220 @ 2mA, 5V
Power - Max
225 mW310 mW
Frequency - Transition
200MHz300MHz
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device Package
SOT-23-3SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
MMBT2222ALT1G
TRANS NPN 40V 0.6A SOT23-3
onsemi
631,171
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.21636
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
600 mA
40 V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
225 mW
300MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
SOT-23-3
BC856B-13-F
TRANS PNP 65V 0.1A SOT23-3
Diodes Incorporated
46,723
In Stock
230,000
Factory
1 : ¥1.64000
Cut Tape (CT)
10,000 : ¥0.22720
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
100 mA
65 V
650mV @ 5mA, 100mA
15µA (ICBO)
220 @ 2mA, 5V
310 mW
200MHz
-65°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
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of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.