Single Bipolar Transistors

Results: 4
Packaging
BulkCut Tape (CT)Tape & Box (TB)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
3 A4 A4.5 A5 A
Voltage - Collector Emitter Breakdown (Max)
30 V140 V150 V
Vce Saturation (Max) @ Ib, Ic
220mV @ 200mA, 5A260mV @ 400mA, 4A320mV @ 300mA, 5A330mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A, 1V100 @ 1A, 5V
Power - Max
1.2 W1.58 W
Frequency - Transition
90MHz100MHz110MHz
Package / Case
E-Line-3E-Line-3, Formed Leads
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
Showing
of 4
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3(StandardBody),TO-226_straightlead
ZTX849
TRANS NPN 30V 5A E-LINE
Diodes Incorporated
4,132
In Stock
4,000
Factory
1 : ¥8.46000
Bulk
-
Bulk
Active
NPN
5 A
30 V
220mV @ 200mA, 5A
50nA (ICBO)
100 @ 1A, 1V
1.2 W
100MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
TO-92-3(StandardBody),TO-226_straightlead
ZTX855
TRANS NPN 150V 4A E-LINE
Diodes Incorporated
3,790
In Stock
4,000
Factory
1 : ¥8.46000
Bulk
-
Bulk
Active
NPN
4 A
150 V
260mV @ 400mA, 4A
50nA (ICBO)
100 @ 1A, 5V
1.2 W
90MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
TO-92-3(StandardBody),TO-226_straightlead
ZTX949STZ
TRANS PNP 30V 4.5A E-LINE
Diodes Incorporated
1,875
In Stock
6,000
Factory
1 : ¥8.46000
Cut Tape (CT)
2,000 : ¥3.50871
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
PNP
4.5 A
30 V
320mV @ 300mA, 5A
50nA (ICBO)
100 @ 1A, 1V
1.58 W
100MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
TO-92-3(StandardBody),TO-226_straightlead
ZTX955
TRANS PNP 140V 3A E-LINE
Diodes Incorporated
0
In Stock
Check Lead Time
4,000 : ¥4.01804
Bulk
-
Bulk
Active
PNP
3 A
140 V
330mV @ 300mA, 3A
50nA (ICBO)
100 @ 1A, 5V
1.2 W
110MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
Showing
of 4

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.