Single Bipolar Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

KSB596YTU TRANS PNP 80V 4A TO220-3 onsemi	924 In Stock	1 : ¥8.78000 Tube	-	Tube	Obsolete	PNP	4 A	80 V	1.7V @ 300mA, 3A	70µA (ICBO)	120 @ 500mA, 5V	30 W	3MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
KSD526Y TRANS NPN 80V 4A TO220-3 onsemi	570 In Stock	1 : ¥10.10000 Bulk	-	Bulk	Obsolete	NPN	4 A	80 V	1.5V @ 300mA, 3A	30µA (ICBO)	120 @ 500mA, 5V	30 W	8MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3

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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.