Single Bipolar Transistors

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
600 mA2 A
Voltage - Collector Emitter Breakdown (Max)
30 V100 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA (ICBO)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V100 @ 500mA, 2V
Power - Max
250 mW2 W
Frequency - Transition
140MHz300MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Supplier Device Package
SOT-223-3TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-223-3
FZT753TA
TRANS PNP 100V 2A SOT223-3
Diodes Incorporated
40,694
In Stock
1 : ¥5.25000
Cut Tape (CT)
1,000 : ¥2.25540
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
2 A
100 V
500mV @ 200mA, 2A
100nA (ICBO)
100 @ 500mA, 2V
2 W
140MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
TO-236AB
PMBT2222A,215
TRANS NPN 30V 0.6A TO236AB
Nexperia USA Inc.
286,148
In Stock
1 : ¥1.15000
Cut Tape (CT)
3,000 : ¥0.19195
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
600 mA
30 V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
250 mW
300MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
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of 2

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.