Single Bipolar Transistors

Results: 2
Manufacturer
onsemiRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNNPN - Darlington
Current - Collector (Ic) (Max)
100 mA4 A
Voltage - Collector Emitter Breakdown (Max)
45 V80 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA2.5V @ 8mA, 2A
Current - Collector Cutoff (Max)
15nA (ICBO)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 5V500 @ 2A, 4V
Power - Max
200 mW1.75 W
Frequency - Transition
200MHz-
Operating Temperature
-65°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
DPAKSST3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
RUC002N05T116
BC847BHZGT116
TRANS NPN 45V 0.1A SST3
Rohm Semiconductor
9,017
In Stock
This product has a maximum purchase limit
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26786
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
100 mA
45 V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
200 mW
200MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SST3
DPAK_369C
MJD6039T4G
TRANS NPN DARL 80V 4A DPAK
onsemi
3,421
In Stock
1 : ¥7.72000
Cut Tape (CT)
2,500 : ¥2.93389
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
NPN - Darlington
4 A
80 V
2.5V @ 8mA, 2A
10µA
500 @ 2A, 4V
1.75 W
-
-65°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
Showing
of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.