Single Bipolar Transistors

Results: 3
Manufacturer
Central Semiconductor CorpComchip Technologyonsemi
Packaging
BagBulkCut Tape (CT)Tape & Box (TB)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
200 mA800 mA
Voltage - Collector Emitter Breakdown (Max)
30 V40 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA (ICBO)100nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 100mA, 1V100 @ 10mA, 1V100 @ 150mA, 10V
Power - Max
500 mW625 mW
Operating Temperature
-65°C ~ 200°C (TJ)-55°C ~ 150°C (TJ)
Package / Case
TO-206AA, TO-18-3 Metal CanTO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-18TO-92TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3 Formed Leads
2N3906TA
TRANS PNP 40V 0.2A TO92-3
onsemi
11,824
In Stock
1 : ¥2.63000
Cut Tape (CT)
2,000 : ¥0.44163
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
PNP
200 mA
40 V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-92-3 Formed Leads
2N3906-G
TRANS PNP 40V 0.2A TO92
Comchip Technology
21,078
In Stock
1 : ¥2.71000
Bag
-
Bag
Active
PNP
200 mA
40 V
400mV @ 5mA, 50mA
100nA (ICBO)
30 @ 100mA, 1V
-
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
3,924
In Stock
1 : ¥19.37000
Bulk
-
Bulk
Active
NPN
800 mA
30 V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
500 mW
250MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
Showing
of 3

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.