Single Bipolar Transistors

Results: 3
Manufacturer
onsemiToshiba Semiconductor and Storage
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Collector (Ic) (Max)
100 mA150 mA
Voltage - Collector Emitter Breakdown (Max)
30 V50 V65 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA, 5V200 @ 2mA, 6V420 @ 2mA, 5V
Power - Max
150 mW200 mW300 mW
Frequency - Transition
80MHz100MHz
Operating Temperature
-55°C ~ 150°C (TJ)125°C (TJ)
Package / Case
5-TSSOP, SC-70-5, SOT-353SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SC-70-3 (SOT323)SOT-23-3 (TO-236)USV
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
BC846ALT3G
TRANS NPN 65V 0.1A SOT23-3
onsemi
45,163
In Stock
1 : ¥1.15000
Cut Tape (CT)
10,000 : ¥0.15589
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
100 mA
65 V
600mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
SC-70-3
BC848CWT1G
TRANS NPN 30V 0.1A SC70-3
onsemi
55,906
In Stock
117,000
Factory
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.32251
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
100 mA
30 V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
150 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70-3 (SOT323)
10,146
In Stock
1 : ¥1.81000
Cut Tape (CT)
3,000 : ¥0.38542
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
150 mA
50 V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
200 mW
80MHz
125°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
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of 3

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.