Single Bipolar Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

TBC847B,LM TRANS NPN 50V 0.15A SOT23-3 Toshiba Semiconductor and Storage	123,710 In Stock	1 : ¥1.31000 Cut Tape (CT) 3,000 : ¥0.21991 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	NPN	150 mA	50 V	400mV @ 100mA, 5mA	30nA (ICBO)	200 @ 2mA, 5V	320 mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
TBC857B,LM TRANS PNP 50V 0.15A SOT23-3 Toshiba Semiconductor and Storage	14,207 In Stock	1 : ¥1.31000 Cut Tape (CT) 3,000 : ¥0.21991 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	PNP	150 mA	50 V	650mV @ 100mA, 5mA	30nA (ICBO)	210 @ 2mA, 5V	320 mW	80MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3

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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.