Single Bipolar Transistors

Results: 2
Manufacturer
Nexperia USA Inc.onsemi
Series
-BC847xW
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNNPN - Darlington
Current - Collector (Ic) (Max)
100 mA300 mA
Voltage - Collector Emitter Breakdown (Max)
30 V45 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA, 5V10000 @ 100mA, 5V
Power - Max
200 mW225 mW
Frequency - Transition
100MHz125MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-323
BC847W,115
TRANS NPN 45V 0.1A SOT323
Nexperia USA Inc.
57,571
In Stock
1 : ¥0.90000
Cut Tape (CT)
3,000 : ¥0.15500
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
100 mA
45 V
400mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
200 mW
100MHz
150°C (TJ)
-
-
Surface Mount
SC-70, SOT-323
SOT-323
SOT 23-3
MMBTA13LT3G
TRANS NPN DARL 30V 0.3A SOT23-3
onsemi
29,481
In Stock
1 : ¥1.64000
Cut Tape (CT)
10,000 : ¥0.21285
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN - Darlington
300 mA
30 V
1.5V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
225 mW
125MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
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of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.