Single Bipolar Transistors

Results: 2
Manufacturer
Nexperia USA Inc.onsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
100 mA3 A
Voltage - Collector Emitter Breakdown (Max)
45 V60 V
Vce Saturation (Max) @ Ib, Ic
225mV @ 50mA, 1A600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA, 2V200 @ 2mA, 5V
Power - Max
300 mW1.25 W
Frequency - Transition
100MHz110MHz
Operating Temperature
-55°C ~ 150°C (TJ)175°C (TJ)
Qualification
AEC-Q100AEC-Q101
Package / Case
SC-100, SOT-669TO-236-3, SC-59, SOT-23-3
Supplier Device Package
LFPAK56, Power-SO8SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
SBC847BLT1G
TRANS NPN 45V 0.1A SOT23-3
onsemi
6,711
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.51183
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
100 mA
45 V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
LFPAK56/POWER-SO8/SOT669
PHPT60603PYX
TRANS PNP 60V 3A LFPAK56 PWRSO8
Nexperia USA Inc.
57,781
In Stock
1 : ¥4.10000
Cut Tape (CT)
1,500 : ¥1.55986
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
3 A
60 V
225mV @ 50mA, 1A
100nA (ICBO)
150 @ 500mA, 2V
1.25 W
110MHz
175°C (TJ)
Automotive
AEC-Q100
Surface Mount
SC-100, SOT-669
LFPAK56, Power-SO8
Showing
of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.