Single Bipolar Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

BD677 TRANS NPN DARL 60V 4A SOT32-3 STMicroelectronics	5,682 In Stock	1 : ¥4.19000 Tube	-	Tube	Active	NPN - Darlington	4 A	60 V	2.5V @ 30mA, 1.5A	500µA	750 @ 1.5A, 3V	40 W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	SOT-32-3
2SC1815 PBFREE TRANS NPN 50V 0.15A Central Semiconductor Corp	4,062 In Stock	1 : ¥7.64000 Bulk	-	Bulk	Active	NPN	150 mA	50 V	250mV @ 10mA, 100mA	100nA (ICBO)	70 @ 2mA, 6V	400 mW	80MHz	-	-	-	-

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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.