Single Bipolar Transistors

Results: 3
Manufacturer
onsemiRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Voltage - Collector Emitter Breakdown (Max)
45 V80 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA700mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V250 @ 100mA, 1V
Power - Max
200 mW300 mW
Frequency - Transition
50MHz100MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3 (TO-236)SST3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
BC807-40LT3G
TRANS PNP 45V 0.5A SOT23-3
onsemi
66,909
In Stock
1 : ¥0.99000
Cut Tape (CT)
10,000 : ¥0.13990
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
250 @ 100mA, 1V
300 mW
100MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
RUC002N05T116
SSTA06HZGT116
TRANS NPN 80V 0.5A SST3
Rohm Semiconductor
15,287
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.34818
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
500 mA
80 V
250mV @ 10mA, 100mA
100nA (ICBO)
100 @ 10mA, 1V
200 mW
100MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SST3
RUC002N05T116
SSTA56HZGT116
TRANS PNP 80V 0.5A SST3
Rohm Semiconductor
6
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.32984
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
500 mA
80 V
250mV @ 10mA, 100mA
100nA (ICBO)
100 @ 10mA, 1V
200 mW
50MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SST3
Showing
of 3

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.