Single Bipolar Transistors

Results: 3
Packaging
BulkTube
Transistor Type
NPNNPN - Darlington
Current - Collector (Ic) (Max)
1 A4 A
Voltage - Collector Emitter Breakdown (Max)
40 V60 V80 V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA2.5V @ 30mA, 1.5A2.8V @ 40mA, 2A
Current - Collector Cutoff (Max)
10nA (ICBO)100µA500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V750 @ 1.5A, 3V750 @ 2A, 3V
Power - Max
625 mW40 W
Frequency - Transition
300MHz-
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-225AA, TO-126-3TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-126-3TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3(StandardBody),TO-226_straightlead
PN2222ABU
TRANS NPN 40V 1A TO92-3
onsemi
3,099
In Stock
1 : ¥3.28000
Bulk
-
Bulk
Active
NPN
1 A
40 V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-126
BD679AS
TRANS NPN DARL 80V 4A TO126-3
onsemi
2,751
In Stock
2,000
Factory
1 : ¥6.24000
Bulk
-
Bulk
Active
NPN - Darlington
4 A
80 V
2.8V @ 40mA, 2A
500µA
750 @ 2A, 3V
40 W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126-3
TO-126
KSE800STU
TRANS NPN DARL 60V 4A TO126-3
onsemi
1,793
In Stock
7,680
Factory
1 : ¥10.43000
Tube
-
Tube
Active
NPN - Darlington
4 A
60 V
2.5V @ 30mA, 1.5A
100µA
750 @ 1.5A, 3V
40 W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126-3
Showing
of 3

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.