Single Bipolar Transistors

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max)
60 V100 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 100mA, 1A500mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 1A, 2V100 @ 100mA, 5V
Power - Max
500 mW800 mW
Frequency - Transition
75MHz120MHz
Package / Case
TO-243AATO-261-4, TO-261AA
Supplier Device Package
PCPSOT-223 (TO-261)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-223 (TO-261)
PZT651T1G
TRANS NPN 60V 2A SOT223
onsemi
11,421
In Stock
1 : ¥4.60000
Cut Tape (CT)
1,000 : ¥1.73071
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
2 A
60 V
500mV @ 200mA, 2A
100nA (ICBO)
75 @ 1A, 2V
800 mW
75MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223 (TO-261)
SOT−89(3−LEAD)
2SC3647T-TD-E
TRANS NPN 100V 2A PCP
onsemi
2,580
In Stock
1 : ¥5.17000
Cut Tape (CT)
1,000 : ¥2.21558
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
2 A
100 V
400mV @ 100mA, 1A
100nA (ICBO)
100 @ 100mA, 5V
500 mW
120MHz
150°C (TJ)
Surface Mount
TO-243AA
PCP
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of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.